The "1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering. The market outlook for SiC devices is promising ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
CISSOID, a specialist in high temperature semiconductors, has announced a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. The IPM technology offers an all-in-one ...
MOSFETs using silicon carbide and gallium nitride technology are emerging to fill the power-controller need in electric and hybrid electric vehicles, and, while they are not yet in volume production, ...
Skyworks is introducing an isolated gate driver reference design that operates with Wolfspeed’s SiC FET power modules. With the growing adoption of SiC for power conversion and inverter applications — ...
For extra powerful and efficient inverter systems used in railways, electric power systems and more TOKYO–(BUSINESS WIRE)–Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will ...
Wide bandgap (WBG) semiconductors are finding applications in all types of power conversion including in electric vehicles. With their promise of higher efficiency and faster switching speeds yielding ...
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has launched an upgrade to its FET-Jet Calculator. This new version (v2) has been designed to significantly streamline the SiC ...
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